Resist remover composition

ABSTRACT

The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrated circuits and very large scale integrated circuits. The composition comprises a) 10 to 40 wt. % of water-soluble organic amine compound, b) 10 to 60 wt. % of water-soluble polar organic solvent, c) 10 to 30 wt. % of water, and d) 0.1 to 10 wt. % of organic phenol compound containing two or more hydroxyl groups, and it is characterized in that the water-soluble polar organic solvent is 2-hydroxyisobutyric acid methylester (HBM).

BACKGROUND OF THE INVENTION

[0001] (a) Field of the Invention

[0002] The present invention relates to a remover composition forremoving resists during a manufacturing process of semiconductor devicessuch as integrated circuits (IC), large scale integrated circuits (LSI)and very large scale integrated circuits (VLSI). More particularly, thepresent invention relates to a resist remover composition which caneasily and quickly remove resist film that is cured by dry etching,ashing and ion implantation processes that have been recently emphasizeddue to the miniaturization and integration of circuit patterns duringphotolithography, and photoresist film modified by metallicside-products etched from lower metal film materials during saidprocesses, at a low temperature, and which can minimize the corrosion oflower metal wiring during the resist removal process.

[0003] (b) Description of the Related Art

[0004] Generally, manufacturing processes of semiconductor devicescomprise lithography processes that comprise forming a resist pattern ona conductive layer formed on a semiconductor substrate, and then forminga conductive layer pattern using the pattern as a mask. The resistpattern used as a mask must be removed from the conductive layer withresist remover during the stripping process after the conductive layerpattern forming process. However, since in recent very large scaleintegrated circuit semiconductor manufacturing, a dry etching processfor forming conductive layer patterns has been conducted, it becomesdifficult to remove resists in a subsequent stripping process.

[0005] In a dry etching process which replaces a wet etching processusing liquid-phase acids, the etching process is conducted using agas-phase solid-phase reaction between plasma etching gases and layerssuch as the conductive layer. Dry etching forms the main-stream ofrecent etching processes, because it is easy to control and can obtainsharp patterns. However, since during a dry etching process, ions andradicals of plasma etching gases cause complex chemical reactions withthe resist film on its surface and rapidly cure it, it becomes difficultto remove the resist. Examples of dry etching include reactive ionetching (RIE), which renders it difficult to remove resist in areproducible manner using conventional resist removers.

[0006] Another process that makes the removal of resists difficult is anion implantation process. This process is conducted to diffuse atomssuch as phosphorous, arsenic, boron, etc., in order to allowconductivity in a specific area of a silicon wafer in manufacturingprocesses of semiconductor devices. During this process, ions areinjected only into a silicon wafer area that is not covered by theresist pattern, and simultaneously the surface of the resist patternused as a mask in the ion implantation process is modified by a chemicalreaction between the surface and accelerated ion beams. Accordingly,after the ion implantation process, it becomes difficult to remove theresist film using various solvents in a stripping process.

[0007] A resist film that has undergone the above-mentioned dry etchingprocess or ion implantation process cannot be sufficiently removed usingconventional phenol resist remover, and even if removed, inferiorityrates of semiconductor devices increase because high temperature of 100°C. or more and long immersion time are required, and thus the strippingprocess cannot be stably conducted. For this reason, phenol resistremover is presently seldom used at a manufacturing site.

[0008] Meanwhile, a recently suggested resist remover compositioncomprising alkanol amine and diethyleneglycol monoalkyl ether has beenwidely used because it has little odor and toxicity and exhibitseffective removing performance for most resist films. However, it hasalso been found that said remover composition cannot sufficiently removeresist film exposed to plasma etching gases or ion beams in a dryetching process or an ion implantation process. Thus, there has been aneed for the development of a novel resist remover that can removeresist film modified by the dry etching and ion implantation processes.

[0009] As stated above, it is difficult to remove resist film that hasundergone the ion implantation process using resist remover.Particularly, it is more difficult to remove resist film that hasundergone the ion implantation process with a high radiation dose forforming source/drain area in very large scale integrated circuitmanufacturing process. During the ion implantation process, the surfaceof the resist film is cured mainly due to reaction heat from the highenergy ion beams and the high radiation dose. In addition, popping ofthe resist occurs which generates resist residues. Commonly, asemiconductor wafer that is ashing-treated is heated to a hightemperature of 200° C. or more. At this time, solvent remaining insidethe resist should be evaporated and exhausted, which is not possiblebecause a cured layer exists on the surface of the resist after the ionimplantation process with a high radiation dose.

[0010] Accordingly, as ashing proceeds, internal pressure of the resistfilm increases and the surface of the resist film is ruptured by solventremaining inside, which is referred to as popping. The surface curedlayer dispersed by such popping becomes residues and they are difficultto remove. In addition, since the cured layer on the surface of theresist forms by heat, impurity ions, or dopants, are substituted in thestructure of resist molecules to cause a cross-linking reaction, and thereacted area is oxidized by O2 plasma. Thus the oxidized resist changesinto residues and particles to become contaminants, which lowers theproduction yield of very large scale integrated circuit manufacture.

[0011] Many dry and wet etching processes for effectively removing theresist cured layer have been suggested, one of which is a two stepashing method comprising conducting common ashing and following with asecond ashing process as described in Fujimura, Japanese SpringApplication Physical Society Announcement, 1P-13, p574, 1989. However,these dry etching processes are complicated, they require a lot ofequipment and they lower production yield.

[0012] In addition, a resist remover composition comprising an organicamine compound and various organic solvents has been suggested as aresist remover used in a conventional wet stripping process.Specifically, a resist remover composition containing monoethanolamine(MEA) as the organic amine compound is widely used.

[0013] As examples, a two-component system resist stripper compositioncomprising a) organic amine compounds such as monoethanolamine (MEA),2-(2-aminoethoxy)ethanol (AEE), etc., and b) polar solvents such asN,N-dimethylacetamide (DMAc), N,N-dimethylformamide (DMF),N-methylpyrrolidone (NMP), dimethylsulfoxide (DMSO), carbitol acetate,methoxyacetoxypropane, etc. (U.S. Pat. No. 4,617,251); a two-componentsystem resist stripper composition comprising a) organic amine compoundssuch as monoethanolamine (MEA), monopropanolamine, methylamylethanol,etc., and b) amide solvents such as N-methylacetamide (Mac),N,N-dimethylacetamide (DMAc), N,N-dimethylformamide (DMF),N,N-dimethylpropionamide, N,N-diethylbutylamide,N-methyl-N-ethylpropionamide, etc. (U.S. Pat. No. 4,770,713); atwo-component system resist stripper composition comprising a) organicamine compounds such as monoethanolamine (MEA), and b) non-protonicpolar solvents such as 1,3-dimethyl-2-imidazolidinone (DMI),1,3-dimethyl-tetrahydropyrimidinon, etc. (German Laid-Open PatentApplication No. 3,828,513); a resist stripper composition comprising a)ethylene oxide-introduced alkylene polyamines of alkanol amines such asmonoethanolamine (MEA), diethanol amine (DEA), triethanolamine (TEA),etc., and ethylenediamine, b) sulfone compounds such as sulforane, etc.,and c) glycol monoalkyl ethers such as diethylene glycol monoethylether, diethylene glycolmonobutyl ether, etc., in a specific ratio(Japanese Laid-open Patent Publication No. Sho 62-49355); a resiststripper composition comprising a) water soluble amines such asmonoethanolamine (MEA), diethanolamine (DEA), etc., and b)1,3-dimethyl-2-imidazolidinone (Japanese Laid-open Patent PublicationNo. Sho 63-208043); a positive resist stripper composition comprising a)amines such as monoethanolamine (MEA), ethylenediamine, piperidine,benzyl amine, etc., b) polar solvents such as DMAC, NMP, DMSO, etc., andc) a surfactant (Japanese Laid-open Patent Publication No. Sho63-231343); a positive resist stripper composition comprising a)nitrogen-containing organic hydroxy compounds such as monoethanolamine(MEA), b) one or more solvents selected from diethyleneglycol monoethylether, diethyleneglycol dialkyl ether,

-butyrolactone and 1,3-dimethyl-2-imidazolinone, and c) DMSO in aspecific ratio (Japanese Laid-open Patent Publication No. Sho 64-42653);a positive resist stripper composition comprising a) organic aminecompounds such as monoethanolamine (MEA), etc., b) a non-protonic polarsolvent such as diethylene glycol monoalkyl ether, DMAc, NMP, DMSO,etc., and c) a phosphate ester surfactant (Japanese Laid-open PatentPublication No. Hei 4-124668); a resist stripper composition comprisinga) 1,3-dimethyl-2-imidazolidinone (DMI), b) dimethylsulfoxide (DMSO),and c) organic amine compounds such as monoethanolamine (MEA), etc.(Japanese Laid-open Patent Publication No. Hei 4-350660); and a resiststripper composition comprising a) monoethanolamine (MEA), b) DMSO, c)catechol (Japanese Laid-open Patent Publication NO. Hei 5-281753) havebeen suggested and these resist stripper compositions show relativelygood properties in terms of their stabilities, processabilities andresist removing performances.

[0014] However, one of the recent tendencies of semiconductor devicemanufacturing processes is treating various substrates including siliconwafers at a high temperature of 110 to 140° C., and thus resists areoften baked at high temperatures. However, said resist strippers do nothave sufficient capabilities for removing resists that are baked at hightemperatures. As compositions for removing the hard baked resists,resist remover compositions containing water and/or hydroxylamine havebeen suggested. As examples, a resist stripper composition comprising a)hydroxylamines, b) alkanol amines, and c) water (Japanese Laid-openPatent Publication No. Hei 4-289866; a resist stripper compositioncomprising a) hydroxylamines, b) alkanol amines, c) water and d)anti-corrosives (Japanese Laid-open Patent Publication No. Hei6-266119); a resist stripper composition comprising a) polar solventssuch as GBL, DMF, DMAc, NMP, etc., b) aminoalcohols such as2-methylaminoethanol, and c) water (Japanese Laid-open PatentPublication No. Hei 7-69618); a stripper composition comprising a)aminoalcohols such as monoethanolamine (MEA), b) water, and c)butyldiglycol (Japanese Laid-open Patent Publication No. Hei 8-123043);a resist stripper composition comprising a) alkanolamines, alkoxyamines,b) glycol monoalkyl ether, c) sugar alcohols, d) quaternary ammoniumhydroxide, and e) water (Japanese Laid-open Patent Publication No. Hei8-262746); a stripper composition comprising a) one or morealkanolamines of monoethanolamine (MEA) or AEE, b) hydroxylamine, c)diethyleneglycol monoalkyl ether, d) sugars (sorbitol), and e) water(Japanese Laid-open Patent Publication No. Hei 9-152721); a resiststripper composition comprising a) hydroxylamines, b) water, c) amineshaving an acid dissociation constant (pKa) of 7.5 to 13, d) watersoluble organic solvent, and e) an anticorrosive (Japanese Laid-openPatent Publication No. Hei 9-96911) have been suggested.

[0015] However, said resist stripper compositions are not satisfactoryin terms of either their removing performances for resist films cured bydry etching, ashing and ion implantation processes and those modified bymetallic side-products etched from lower metal film materials duringsaid processes, or anti-corrosive performances of lower metal wiringduring the resist removal process.

SUMMARY OF THE INVENTION

[0016] It is an object of the present invention to provide a resistremover composition that can easily and quickly remove resist filmscured by dry etching, ashing and ion implantation processes and thosemodified by metallic side-products etched from metal film materialsduring said processes at a low temperature, and which can minimize thecorrosion of lower metal wiring.

[0017] In order to achieve these objects, the present invention providesa resist remover composition comprising a) 10 to 40 wt % ofwater-soluble organic amine compounds, b) 10 to 60 wt % of water-solublepolar organic solvent, c) 10 to 30 wt % of water, and d) 0.1 to 10 wt %of an organic phenol compound containing two or more hydroxyl groups,characterized in that said water-soluble polar organic solvent is2-hydroxyisobutyric acid methylester (HBM).

[0018] In the resist remover composition according to the presentinvention, an amino alcohol compound is preferably used as thewater-soluble organic amine compound, and the amino alcohol compound isselected from a group consisting of 2-amino-1-ethanol,1-amino-2-propanol, 2-amino-1-propanol, 3-amino-1-propanol,2-amino-1-butanol, 4-amino-1-butanol and a mixture thereof.

[0019] The b) water-soluble polar organic solvent may further compriseone or more compounds selected from a group consisting ofdimethylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide(DMAc), dimethylformaide (DMF), dimethylimidazolinoe (DMI) and aliphaticcarboxylic acid ester.

[0020] In addition, the aliphatic carboxylic acid ester is preferablyselected from a group consisting of β-methoxy isobutyric acidmethylester (HBM), 2-hydroxypropionic acid isopentyl ester,2-hydroxypropionic acid butyl ester, ethyl-3-ethoxypropionate (EEP),methyl-3-methoxypropionate (MMP), ethyl-2-hydroxy propanate,butyl-2-hydroxy propanoate and a mixture thereof.

[0021] The phenol compound containing two or more of hydroxyl groups isselected from a group consisting of the compounds represented by thefollowing formulae 1 to 5:

[0022] In the Formulae 1 to 5, R₁, which may be the same or different,is a C1-4 alkyl or C1-4 alkoxy group; R₂, which may be the same ordifferent, is hydrogen, a C1-4 alkyl group, or a C1-4 alkoxy group; R₃and R₄, which may be the same or different, are a C1-4 alkyl or C1-4alkoxy group; k is an integers of 1 to 3; m₁ to m₇ are integers of 1 to3; and n₁ to n₄ are integer of 0 to 3. Preferably, R₁ is a C1-4 alkylgroup, R₂ to R₄ are C1-4 alkyl groups, k and m₁ to m₇ are 1, and n₁ ton₄ are 0 or 1.

[0023] The resist remover composition according to the present inventioncan easily and quickly remove resist film that is cured by dry etching,ashing and ion implantation processes and those modified by metallicside-products etched from lower metal film materials during saidprocesses at a low temperature. In addition, it can minimize thecorrosion of lower metal wiring, particularly side pitting during theresist removal process, and it decreases the phenomenon in which resistsdissolved in resist remover are extracted to redeposit on the surface ofa substrate. In addition, it can be rinsed with water without a need touse organic solvents such as isopropylalcohol and dimethylsulfoxide in asubsequent rinsing process.

BRIEF DESCRIPTION OF THE DRAWINGS

[0024]FIG. 1 shows Sample b-16 that has undergone a dry etching processfor forming via holes (1) that function as electrical connectionpassages with a lower metal wiring pattern and an ashing process forremoving most resists.

[0025]FIG. 2 is a SEM photo showing results of testing resist-removingperformance using the resist remover composition of Example 10 at 50° C.

[0026]FIG. 3 is a SEM photo showing results of testing resist-removingperformance using the resist remover composition of Comparative Example7 at 50° C.

DETAILED DESCRIPTION AND THE PREFERRED EMBODIMENTS

[0027] The present invention will be explained in more detail.

[0028] In the resist remover composition of the present invention, thea) water-soluble organic amine compounds are preferably amino alcohols.As examples, it is preferably selected from a group consisting of2-amino-1-ethanol, 1-amino-2-propanol, 2-amino-propanol,3-amino-1-propanol, 2-amino-1-butanol, 4-amino-1-butanol and a mixturethereof, and 2-amino-1-ethanol is most preferable from an industrialviewpoint considering resist removing performances and costs.

[0029] The content of the water-soluble organic amine compound ispreferably 10 to 40 wt %, and more preferably 20 to 30 wt %.Specifically, if the content is less than 10 wt %, it will be difficultto completely remove resist modified by the preceding dry etching and/orion implantation processes, and if the content exceeds 40 wt %, thecorrosion of lower metal wiring film materials will be serious.

[0030] The b) water-soluble organic solvent is preferably2-hydroxyisobutyric acid methylester (HBM). In addition, it may furthercomprise water-soluble polar organic solvents selected from a groupconsisting of dimethylsulfoxide (DMSO), N-methylpyrrolidone (NMP),dimethylacetamide (DMAc), dimethylformamide (DMF),dimethylimidazolidinone (DMI), aliphatic carboxylic acid ester and amixture thereof.

[0031] The aliphatic carboxylic acid ester of the water soluble polarorganic solvent is preferably selected from a group consisting ofβ-methoxy isobutyric acid methylester (MBM), 2-hydroxypropionic acidisopentylester, 2-hydroxypropionic acid butyl ester,etyl-3-ethoxypropionate (EEP), methyl-3-methyoxypropionate (MMP),ethyl-2-hydroxy propanate, butyl-2-hydroxy propanoate and a mixturethereof.

[0032] Specifically, the water-soluble polar organic solvent preferablyhas a dipole moment of 3.0 or more, and more preferably 4.0 or more. Adipole moment indicates polarity of a solvent, and a higher value meansa higher polarity. The water-soluble polar organic solvents in Table 1have dipole moments of 3.0 or more, and those having dipole moments of4.0 or more include DMSO, NMP, DMI, etc. The higher the dipole moment ofb), the better the resist removal performance and dissolving performanceof the resist remover composition of the present invention.

[0033] The 2-hydroxyisobutyric acid methylester (HBM) is advantageouslyused as the b) water-soluble polar organic solvent, because it can beeasily mixed with the a) water-soluble organic amine compound. As aresult of studies, the present inventors have found that when amine isproduced by the reaction of amino alcohol and the 2-hjydroxyisobutyricacid methyl ester (HBM), the strippabilities of the resists becomedifferent because of the reducing power of the produced amine. Whenamine is produced by the reaction between aliphatic carboxylic acidester and amino alcohol, the strippability of the resist is excellentbecause the produced amine has good reducing power compared to organicpolar solvents such as dimethylsulfoxide (DMSO), N-methylpyrrolidone(NMP), dimethylacetamide (DMAc), dimethylformamide (DMF),dimethylimidazolidinone (DMI), etc. Particularly, HBM allows mostexcellent strippability because it produces less side-products such asethanol, etc. compared to the other aliphatic carboxylic acid esters.

[0034] In addition, the b) water-soluble polar organic solventpreferably has a boiling point of 150° C. or more, and more preferably180° C. or more in terms of volatility. The water-soluble polar organicsolvents of Table 1 that satisfy said requirement allow stable strippingperformance of the resist remover composition because they have a veryhigh affinity to water. In addition, they have advantages in that arinsing process for removing the remover composition deposited on asubstrate after the resist removal process can be proceeded with purewater instead of organic solvent. In addition, even if a trace amount ofpolar organic solvents remain, they do not adversely affect asemiconductor device since they have low corrosiveness on the metalconductive layer. TABLE 1 DMSO NMP DMI DMF DMAc Dipole moment 4.3 4.094.05 3.86 3.79 Boiling point (° C.) 189 202 225 153 166

[0035] The content of the b) water-soluble polar organic solvent ispreferably 10 to 60 wt %, more preferably 20 to 50 wt %, and mostpreferably 25 to 45 wt %. Results of studies have confirmed that as thedipole moment of the water-soluble polar organic solvent increases, sodoes the resin solubility of the solvent on the resist composition, andit particularly has excellent solubility for unmodified resists thathave undergone preceding processes. If the content of the water-solublepolar organic solvent is less than 20 wt %, the solubility for resiststhat have undergone dry processes such as etching or an ion implantationprocess will be lowered. On the other hand, the upper limit of thecontent of the water-soluble polar organic solvent of 50 wt % is setconsidering a compositional ratio with the other ingredients.

[0036] The c) water is preferably pure water filtered through an ionexchange resin, and more preferably deionized water having a resistivityof 18 MΩ or more.

[0037] The water content is preferably 10 to 30 wt %, and morepreferably 15 to 25 wt %. If the water content is less than 10 wt %, thestrippability for resists that have been seriously modified by metallicside-products generated after dry etching and ashing processes willdecrease. However, if the water content exceeds 30 wt %, lower metalwiring may be corroded during the stripping process and thestrippability for unmodified resists that comprise most of the resistwill be decreased because the contents of the a) water-soluble organicamine compound and the b) water-soluble polar organic solvent will bedecreased. Results of studies have confirmed that the water content ispreferably 10 to 30 wt %.

[0038] In the resist remover composition of the present invention, thed) organic phenol compound containing two or more hydroxyl groups, whichfacilitates resist removal, is selected from a group consisting ofcompounds of the following formulae 1 to 5.

[0039] Wherein R₁, which may be the same or different, is a C1-4 alkylor C1-4 alkoxy group; R₂, which may be the same or different, is ahydrogen atom, a C1-4 alkyl group, or a C1-4 alkoxy group; R₃ and R₄,which may be the same or different, are a C1-4 alkyl or C1-4 alkoxygroup; k is an integer of 0 to 3; m₁ to m₇ are integers of 1 to 3; andn, to n₄ are integers of 0 to 3. Preferably, R₁ is a C1-4 alkyl group,R₂ to R₄ are C1-4 alkyl groups, k and m, to m₇ are 1, and n₁, to n₄ are0 or 1.

[0040] As a result of many studies, it has been discovered that theorganic phenol compound containing two or more hydroxyl groupsremarkably improves resist removal performance at a low temperaturecompared to compounds having a hydroxyl group of less than two such ascresol, xylenol, and salicylic aldehyde. The examples of organic phenolcompounds containing two or more hydroxyl groups include bisphenols suchas 2,4′-methylenebisphenol, bisphenol A, bisphenol C, bisphenol E,bisphenol F, bisphenol AP, bisphenol M, bisphenol P,1,1′-bis(4-hydroxylphenyl)cyclopentane,9,9′-bis(4-hydroxyphenyl)fluorine,1,1′-bis(5-methyl-2-hydroxylphenyl)methane,3,5-dimethyl-4-hydroxybenzylphenol, 4,4′-hydroxylbenzophenone, etc.;tris phenols such as 1,1,1-(tris(4-hydroxyphenyl)methane,1,1,1-tris(4-hydroxyphenyl)ethane,1,1-bis(3-methyl-4-hydroxyphenyl)-1-(4-hydroxylphenyl)methane,1,1-bis(2,5-dimethyl-4-hydroxyphenyl) 1-(2-hydroxyphenyl)methane,1,1-bis(3,5-methyl-4-hydroxyphenyl)-1-(2-hydroxyphenyl)methane,2,6-bis(5-methyl-2-hydroxybenzyl)-4-methylphenol,2,6-bis(3-methyl-4-hydroxybenzyl)-4-methylphenol,2,6-bis(3,5-dimethyl-4-hydroxybenzyl)4-methylphenol, trisphenol-TC,etc.; tetrakis phenols such as1,1,2,2-tetrakis(3-methyl-4-hydroxyphenyl)ethane,1,1,3,3-tetrakis(4-hydroxyphenyl)propane,1,1,5,5-tetrakis(4-hydroxyphenyl)pentane, α ,α ,α ′,α′-tetrakis(4-hydroxyphenyl)-3-xylene, α ,α ,α ′,α′-tetrakis(4-hydroxyphenyl)-4-xylene, α ,α ,α ′,α′-tetrakis(3-methyl-4-hydroxyphenyl)-3-xylene, α ,α ,α ′,α′-tetrakis(3-methyl-4-hydroxyphenyl)-4-xylene, etc.;hydroxybenzophenones such as 2,3,4 -trihydroxybenzophenone,2,4,4′-trihydroxybenzophenone, 2,3,4,4′-tetrahydroxybenzophenone,2,2′,3,3′,4-pentahydroxybenzophenone,2,2′,3,3′,4,4′-hexahydroxybenzophenone, etc.;1-[1′-methyl-1′-(4′-hydroxyphenyl)ethyl]-4-[1′,1′-bis-(4-hydroxyphenyl)ethyl]benzene,2,6-bis(2′-hydroxy-5′-methylphenylethyl)-4-methyl-1-hydroxybenzene, etc.

[0041] The d) organic phenol compound containing two or more hydroxylgroups is essential for removing resist films cured by dry etching,ashing and ion implantation processes and those modified by metallicside-products etched from lower metal film materials during saidprocesses, and effectively infiltrates hydroxide ions generated by thereaction between the water-soluble organic amine compound and hydrogenions of water into a contact surface between the resist film and asemiconductor substrate. In addition, the d) organic phenol compoundcontaining two or more hydroxyl groups prevents hydroxyl groupsgenerated from the resist remover composition from corroding lower metalfilm materials.

[0042] In the resist remover composition of the present invention, thecontent of the d) organic phenol compound containing two or morehydroxyl groups is preferably 0.1 to 10 wt %, and more preferably 0.5 to5 wt %. If the content of the compound is less than 0.1 wt %, the lowtemperature strippability for resist films that have been seriouslymodified by metallic side-products generated after dry etching and ionimplantation processes will be decreased and the corrosion of lowermetal film materials will become serious. If the content exceeds 10 wt%, the strippability for resist films will be uneconomical from anindustrial viewpoint considering preparation costs.

[0043] Although the organic phenol compound containing two or morehydroxyl groups alone can facilitate anti-corrosive effects to theresist remover composition of the present invention, it cannotcompletely solve the pitting phenomenon, which is a partial erosiongenerated on the side or upper surface of the lower metal wiring filmmaterial. As a result of studies, it has been discovered that mixingtriazole compounds with the organic phenol compound containing two ormore hydroxyl groups can prevent the pitting. Particularly, it has beendiscovered that mixing a two-component system triazole compoundcomprising benzotriazole (BT) and tollyltriazole (TT) with the aromaticphenol compound containing hydroxyl groups in a suitable ratio wouldimprove the effects of preventing side pitting that occurrs on theside-wall of resist film.

[0044] The resist remover composition of the present invention mayfurther comprise benzotriazole (BT), tollyltriazole (TT), carboxylicbenzotriazole (CBT) and a mixture thereof, among which a two-componentsystem triazole compound comprising BT and TT is preferable.

[0045] The content of the triazole compound is preferably 0.5 to 5 wt %.If the content is less than 0.5 wt %, pitting-preventing performancewill be insignificant, and if the content exceeds 5 wt %, the viscosityof the resist remover composition will increase and thus convenienceduring use will be lowered.

[0046] The resist remover composition of the present inventionpreferably comprises a silicon-type surfactant represented by thefollowing formula 6.

[0047] Wherein x is an integer of 0-10; y is an integer of 1-10; m is aninteger of 0-10; n is an integer of 1-10; EO represents an ethyleneoxygroup; PO represents a 1,2-propyleneoxy group; and Z represents ahalogen atom or alkyl group.

[0048] The surfactant must be selected from those having sufficientsolubility for a water-soluble organic amine compound, water-solublepolar organic solvent and water. As a result of studies, it has beendiscovered that the silicon type surfactant represented by the formula 6is preferable in terms of a decrease in surface tension and preventionof photoresist redeposit. In addition, although a fluorine typesurfactant widely used in conventional photoresist remover compositionscan exhibit excellent surface-active effects when used in small amounts,it cannot be used in the resist remover composition of the presentinvention because it generates impurities or residues when dissolved inwater and thus it has low solubility for the composition of the presentinvention.

[0049] However, since the silicon type surfactant represented by theformula 6 has high solubilities for water, water-soluble organic aminecompounds and water-soluble polar organic solvent while exhibitingexcellent surface-activating effects, it can achieve desiredsurface-activating effects without imposing the above problems. It alsohas excellent effects for preventing redeposit of photoresist, contraryto conventional polyethyleneglycol-type surfactants.

[0050] The redepositing of photoresist, which indicates a phenomenon inwhich the solid components of photoresist that have been dissolved in aphotoresist remover composition are redeposited on a semiconductorsubstrate and become irremovable, when a semiconductor substrate isdeposited in a photoresist remover composition that has been used for along time, is one of the major causes for inferiority of photoresistremoval.

[0051] The surfactant lowers the surface tension of the contact surfacebetween lower metal film materials such as Al, dopped Si, Cu, Ti, W,etc. and the photoresist remover composition, thereby allowing thephotoresist remover composition to penetrate deeply betweenmicro-patterns of the conductive layer that is formed of lower metalfilm materials. Although such a function of the surfactant isinsignificant when the size of the micro-pattern is comparatively large,it is more important as the micro-pattern becomes finer. And, thisdirectly affects the production yield of semiconductor devices.

[0052] The content of the surfactant is preferably 0.01 to 1 wt %. Ifthe content of the surfactant is less than 0.01 wt %, it will becomedifficult to remove metal oxides on the side part of micro-patterns andsufficient surface-activating effects cannot be achieved. If the contentof the surfactant exceeds 1 wt %, photoresist redepositing-preventioneffects will be lowered. Accordingly, in the photoresist removercomposition of the present invention, the content of the silicon typesurfactant is most preferably 0.01 to 1 wt %.

[0053] A method for removing resist film that has been used as a maskduring the preceding photo-etching process using the resist removercomposition of the present invention will now be explained.

[0054] The method for removing resist film from a substrate using theresist remover composition of the present invention comprises contactinga substrate on which a resist film is coated with the resist removercomposition of the present invention by a conventional method. Thecontact can be made by immersing the substrate in the resist removercomposition or by spraying the resist remover composition on thesubstrate. Other methods can be used.

[0055] In addition, the conventional resist remover composition canexhibit sufficient resist removal performance only if heated to atemperature of 80° C. or more, while the resist remover composition ofthe present invention can exhibit sufficient resist-removing performanceat a relatively low temperature of 20 to 50° C. Therefore, the resistremover composition of the present invention can reduce the amount ofevaporation (i.e., consumption) of remover composition and energyconsumption during the resist removal process, and it can also reducehealth problems of operators due to the evaporated organic solvents.

[0056] The resist remover composition of the present invention can beapplied to a positive resist, a negative resist or a positive/negativedouble-use resist. As examples, it can be applied to a positive resistcomposition comprising novoalc phenol resin and a naphtoquinonediazidecompound; a positive resist composition comprising a photoacid-producing agent which produces acid when light-exposed, compoundsof which solubility increase in alkaline aqueous solutions whendecomposed by acid and alkali-soluble resin; a positive resistcomposition comprising a photo acid-producing agent which produces acidwhen light-exposed and an alkali-soluble resin containing functionalgroups of which solubility increases in alkaline aqueous solutions whendecomposed by acid; and a negative resist composition comprising a photoacid-producing agent which produces acid when light-exposed, across-linking agent and an alkali-soluble resin, among which thepositive resist composition comprising novolac phenol resin andnaphtoquinonediazide compound is particularly effective.

[0057] The present invention will now be explained in more detail withreference to the following Examples. However, the scope of the presentinvention is not limited thereto. In addition, unless specificallyindicated, the % and mixing ratios are based on weight. The performanceevaluation for the resist remover composition of Examples andComparative Examples is conducted by the following method.

[0058] (1) Resist Removal Performance

[0059] Preparation of Sample a

[0060] On the surface of 5-inch silicon wafers on which aluminum filmwas deposited, a commonly used positive resist composition (MitsubishiCompany product, Product name: IS401) was spin-coated such that thefinal film thickness reached 1.6 μm. The silicon wafers were pre-bakedat 100° C. for 90 seconds on a hot plate. Masks having a predeterminedpattern were placed on the resist film, ultraviolet rays were irradiatedthereto, and the resist film was developed at 21° C. for 60 secondsusing tetramethylammonium hydroxide (TMAH) developer (Dongjin ChemicalIndustry Company product, Product name: DPD-100S). The wafers on whichthe resist patterns were formed were hard-baked at 140° C., 160° C. and180° C. respectively for 300 seconds on a hot plate, and they weredesignated a-14, a-16 and a-18.

[0061] Preparation of Sample b

[0062] Using the resist pattern formed on the Samples a as a mask, aCF₄/O₂ gas mixture as etching gas, and using a dry etching apparatus(Applied Material Company product, Model name: P/500(single handlingtype)), the lower aluminum film that was not covered by the resistpattern was etched to form a metal wiring pattern. At this time, theprocess conditions were controlled such that organic metal film was notformed by the dry etching process. Then, only a part of the upper layerof the resist film was removed by an ashing process using an ashingapparatus (Dongkyung Chemical Industry Company product, Model name:TCA-2400) and an O₂/N₂ gas mixture as a reaction gas, and the sampleswere designated b-14, b-16 and b-18. The etching conditions for the dryetching process were as follows:

[0063] [Dry etching conditions]

[0064] Etching gas: CF4/O₂ gas mixture

[0065] Gas flow rate: 200 sccm

[0066] Pressure: 20 m Torr

[0067] RF Power: 400 W

[0068] Magnetic field: 140 Gauss

[0069] Stage temperature: 20° C.

[0070] Etching time: 300 seconds

[0071] [Ashing Conditions]

[0072] Reaction gas: O₂/N₂ gas mixture =950/50 sccm

[0073] Pressure: 5 m Torr

[0074] Microwave Power: 1 Kw

[0075] Wafer temperature: 200° C.

[0076] Ashing time: 120 seconds/wafer

[0077] Preparation of Sample c

[0078] As⁺ dopant was ion-injected on the front side of the Samples a ata radiation dose of 1×10¹⁶ ions/cm² and an acceleration energy of 80KeV. The ion injection angle was set to 0° so as to conduct theion-injection perpendicular to a substrate side. The samples were movedto a downstream mode microwave ashing apparatus (Dongkyung ChemicalIndustry Company product, Model name: TCA-2400), and only a part of theupper layer of the resist film was removed through an ashing processusing an O₂/N₂ gas mixture as a reaction gas, and the samples weredesignated c-14, c-16 and c-18.

[0079] [Ashing conditions]

[0080] Reaction gas: O₂/N₂ gas mixture =950/50 sccm

[0081] Pressure: 5 mTorr

[0082] Microwave Power: 1 Kw

[0083] Wafer temperature: 200° C.

[0084] Ashing time: 120 sec/wafer

[0085] Resist Removal Test

[0086] The Samples a, b and c were respectively immersed in a resistremover composition at 25° C. and 50° C. for 3 minutes. The samples weretaken out of the resist remover composition, and then, they were washedwith pure water and dried with nitrogen gas. They were examined todetermine whether or not resist residues were deposited on the surfaceof a line pattern and around a via-hole pattern, using a SEM. The resistremoval performance was evaluated on the basis of the followingstandards and the results are presented in Tables 3 and 4.

[0087] ◯: Resist residues were completely removed around via-holepattern and the surface of line pattern.

[0088] Δ: 80% or more of resist residues were removed around via-holepattern and the surface of line pattern, but small amount thereofremained.

[0089] X: Most of resist residues were not removed around via-holepattern and the surface of line pattern.

[0090] (2) Metal Wiring Corrosion Test

[0091] Preparation of Sample d-12

[0092] On the surface of 5-inch silicon wafers on which 1 10,000 Åaluminum film was formed, a commonly used positive resist composition(Mitsubishi Company product, Product name: IS401) was spin-coated suchthat the final film thickness reached 1.6 μm.

[0093] The resist film was pre-baked on a hot plate at 100° C. for 90seconds. A mask having a predetermined pattern was placed on the resistfilm, ultraviolet rays were irradiated thereto and the resist film wasdeveloped using 2.38% tetramethylammonium hydroxide (TMAH) developer(Dongjin Chemical Industry Company product, Product name: DPD-1002) at21° C. for 60 seconds.

[0094] The wafer on which the resist pattern was formed was hard-bakedon a hot plate at 120° C. for 300 seconds.

[0095] Using the thus formed resist pattern as a mask and CF₄/O₂ gasmixture as an etching gas, an aluminum film which was not covered by theresist pattern was etched in a dry etching apparatus (Applied MaterialCompany product, Model name: P/5000) to form a metal wiring pattern. Atthis time, process conditions were controlled so as to not generateorganic metal film during the dry etching process. Only a part of theupper layer of the resist film was removed through an ashing processusing an O₂/N₂ gas mixture as a reaction gas in an ashing apparatus(Donkyung Chemical Industry Company, Model name: TCA-2400), and thesample was designated d-12.

[0096] Metal Wiring Corrosion Test

[0097] The Samples d-12 were immersed in a resist remover compositionfor 10 minutes, 2 hours and 24 hours respectively while maintaining atemperature of 50° C. The samples were taken out of the resist removercomposition, and then they were washed with pure water and dried withnitrogen gas. Then, the upper and side surfaces of the aluminum patternline were examined using a SEM, and the degree of corrosion wasevaluated on the basis of the following standards. The results arepresented in Table 5.

[0098] ⊚: No corrosion on the side or upper surface of aluminum patternline

[0099] ◯: Only a part of the side surface of aluminum pattern line wascorroded.

[0100] Δ: Parts of the side and upper surfaces of aluminum pattern linewere corroded.

[0101] X: The side or upper surface of aluminum pattern was seriouslycorroded.

[0102] (3) Metal Ion Eruption Test

[0103] 20 Samples d-12 were immersed respectively in a 2 kg resistremover composition while maintaining a temperature of 50° C. The resistremover composition was sampled when 12 hours, 24 hours and 48 hours hadelapsed. The amounts of aluminum ions that had erupted from the loweraluminum wiring pattern of the Sample d-12 were measured using an ICP-MSapparatus (Inductively Coupled Plasma-Mass Spectroscopy, PERKIN-ELMERCompany product, Model name: ELAN 6000) equipped with an ETV (ElectroThermal Vaporizer). The results are presented in ppb in Table 6.

[0104] (4) Resist Redeposit Test

[0105] 20 kg of the resist remover compositions of Example 7 andComparative Example 3 were tested for their resist removal capabilitieswhile increasing the treated sheet number of the Samples b-14 and c-14to from 1 to 100, 200, 300 and 400 sheets, while maintaining thetemperature at 50° C. During the test, the amount of resist that wasredeposited on a substrate was examined. When the treated sheet numberswere respectively 1, 100, 200, 300 and 400, the substrate was sampled,rinsed with pure water and dried with nitrogen gas. Then, the numbers ofmicroparticles of resist residues redeposited on the substrate weremeasured using a surface inspection apparatus (Japan Canon Companyproduct, Model name: WIS-850). The results are presented in Table 7.

EXAMPLES 1 to 11 and COMPARATIVE EXAMPLES 1 to 7

[0106] The ingredients a) to d) of the composition of the presentinvention were mixed in a ratio as described in Table 2 to prepare theresist remover compositions of Examples 1 to 11 and Comparative Examples1 to 7. The thus obtained resist remover compositions were tested for(1) their resist removal performance, (2) metal wiring corrosion, (3)metal ion eruption, and (4) resist redeposition. The results arepresented in Tables 3 to 7. TABLE 2 The compositional ratios of resistremover compositions Compositional Ratios of Resist Remover Composition(wt %) d) Organic Phenol a) b) Compound e) Organic Amine Polar Organicc) (having 2 or more Hydroxyl Compound Solvent Water of OH groups) AmineType Content Type Content Content Type Content Content Examples 1 MIPA15 NMP 45 32.0 Formula 7 8 — 2 MIPA 17 DMF 50 29.5 Formula 8 3.5 — 3MIPA 25 HBM 49.5 23.0 Catechol 2.5 — 4 MEA 21 NMP 47 30.0 Formula 9 2 —5 MEA 35 DMI 30 30.0 Formula 10 5 — 6 MEA 30 NMP 50 18.0 Formula 11 2 —7 MEA 40 NMP 30 25.0 Catechol 5 — 8 MEA 40 HBM 30 26.0 Formula 12 4 — 9MEA 30 HBM 47 21.0 Catechol 2 — 10 MEA 30 HBM + MMP 30 + 10 28.0Catechol 2 — 11 MEA 32 HBM + MMP 31 + 11 24.0 Catechol 2 — Comparative 1MEA 10 MFDG 22 48 — — 20 Examples 2 MEA 15 EC 30 30 — — 25 3 MEA 3 DMAc97.0 — — — — 4 AEE 70 MF 20 8 m-C 2 — 5 MEA 60 BC 35 5 — — — 6 MEA 60 BC30 10 — — — 7 MEA 40 EC 30 26 SA 4 — MIPA: Monoisopropanolamine MEA:Monoethanolamine AEE: Aminoethoxy ethanol HBM: 2-hydroxyisobutyric acidmethylester DMF: dimethylformamide NMP: N-methylpyrrolidone DMI:dimethylimidazolidinone DMAc: dimethylacetamide MFDG:dipropyleneglycolmonoethylether EC: Ethyl carbitol BC: Butyl carbitolMF: Methyl formamide PEG: Polyethylenegylcol m-C: m-Cresol SA: Salycylicaldehyde [Formula 7]

[Formula 8]

[Formula 9]

[Formula 10]

[Formula 11]

[Formula 12]

[0107] TABLE 3 Resist removal performance at a resist removercomposition temperature of 25° C. Temperature 25° C. of RemoverComposition Sample (Hard-baking a- b- c- Temperature) a-14 16 a-18 b-1416 b-18 c-14 16 c-18 Example  1 ◯ ◯ ◯ ◯ ◯ Δ ◯ ◯ Δ  2 ◯ ◯ Δ ◯ ◯ ◯ ◯ ◯ Δ 3 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯  4 ◯ ◯ Δ ◯ Δ ◯ ◯ ◯ Δ  5 ◯ ◯ ◯ ◯ Δ Δ Δ ◯ ◯  6 ◯ ◯ ◯◯ ◯ Δ ◯ Δ Δ  7 ◯ ◯ ◯ Δ ◯ ◯ Δ ◯ ◯  8 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯  9 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯◯ 10 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ 11 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ Comparative Example  1 Δ X XΔ X X Δ X X  2 ◯ Δ X ◯ Δ Δ ◯ Δ X  3 Δ X X X X X X X X  4 Δ X X X X X Δ XX  5 ◯ Δ X X X X X X X  6 ◯ Δ X ◯ X X Δ X X  7 ◯ X X Δ X X Δ Δ X

[0108] TABLE 4 Resist removal performance at a resist removercomposition temperature of 50° C. Temperature of Remover Composition 50°C. Sample (Hard-baking Temperature) a- a- a- b- b- b- c- c- c- 14 16 1814 16 18 14 16 18 Example  1 ◯ ◯ ◯ Δ ◯ ◯ Δ ◯ ◯  2 ◯ ◯ Δ ◯ ◯ ◯ ◯ ◯ ◯  3 ◯◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯  4 ◯ ◯ Δ ◯ ◯ ◯ ◯ ◯ ◯  5 ◯ ◯ ◯ Δ Δ ◯ ◯ ◯ ◯  6 ◯ ◯ ◯ ◯ ◯ Δ◯ Δ Δ  7 ◯ ◯ ◯ Δ ◯ ◯ Δ Δ ◯  8 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯  9 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ 10◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ 11 ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ Comparative Example  1 Δ X X Δ XX Δ X X  2 ◯ Δ Δ ◯ ◯ Δ ◯ Δ Δ  3 Δ Δ X Δ X X Δ X X  4 Δ X X X X X Δ X X 5 ◯ ◯ Δ X X X X X X  6 ◯ Δ X ◯ X X Δ X X  7 ◯ Δ Δ ◯ X X Δ X X

[0109] Referring to Tables 3 and 4, it can be seen that the resistremover composition according to the present invention (Examples 1 to11) can effectively remove resist films that have been cured andmodified by a hard-bake process, a dry etching process, an ionimplantation process and/or an ashing process even at a low temperature(25, 50° C.).

[0110] Although the resist remover compositions of the ComparativeExamples can comparatively effectively remove resist films that were notexposed to a dry etching process, an ion implantation process and/or anashing process (Samples a-14, a-16, a-18) even at a low temperature, theresist removal performance decreased as the hard-bake temperatureincreased, and the resist removal performance for resist films that havebeen cured and modified by the dry etching process, the ion implantationprocess and/or the ashing process (Samples b-14 to c-18) were poor.

[0111] Detailed examination of Tables 3 and 4 reveals that the resistremover composition of Comparative Example 3 which does not contain anorganic phenol compound containing two or more hydroxyl groups and watershowed the poorest resist removal performance for cured and modifiedresist film.

[0112] In addition, the composition of Comparative Example 4 whichcontained water but contained a comparatively excessive amount ofwater-soluble organic amine compound showed poor resist removalperformance for cured and modified resist film. It can be seen that thecompositions of the Comparative Examples which did not contain anorganic phenol compound containing two or more hydroxyl groups, or whichcontained an organic phenol compound having one hydroxyl group showedpoor resist removal performance for cured and modified resist films atlow temperature., From the Tables 3 and 4, it can be confirmed that thecomponent that is the most influential in the removal of cured andmodified resist film is the organic phenol compound containing two ormore hydroxyl groups, and it can be seen that the compositions ofExamples 3, 8 and 9 which contained HBM as an organic polar solvent andthose of Examples 10 and 11 which contained HBM+MMP showed better resistremoval performance than those containing other organic solvents. TABLE5 Metal wiring corrosion test Temperature of Remover Composition 50° C.Immersion Time 10 minutes 2 hours 24 hours Examples 1 ⊚ ◯ Δ 2 ⊚ ◯ Δ 3 ⊚⊚ ⊚ 4 ⊚ ◯ Δ 5 ⊚ ◯ Δ 6 ⊚ ⊚ ◯ 7 ⊚ ⊚ ◯ 8 ⊚ ⊚ ⊚ 9 ⊚ ⊚ ◯ 10 ⊚ ⊚ ⊚ 11 ⊚ ⊚ ⊚Comparative 1 Δ X X Examples 2 ◯ Δ Δ 3 Δ X X 4 Δ X X 5 Δ X X 6 ◯ Δ X 7 ΔX X

[0113] Referring to Table 5, it can be seen that in the resist removercomposition according to the present invention (Examples 1 to 11), theorganic phenol compound containing two or more hydroxyl groups whichexhibits anti-corrosion effects hardly corroded the lower metal wiringpattern until 2 hours after immersion, and the compositions of Examples3, 8 and 9 using HBM as the organic polar solvent and those of Examples10 and 11 using HBM+MMP did not corrode the metal wiring pattern evenafter 2 hours or more had elapsed. However, those of ComparativeExamples 1 to 7 began to corrode the lower metal wiring pattern when 10minutes had elapsed after immersion, and it seriously corroded a part ofthe lower metal wiring pattern after two hours. Accordingly, if theremover composition of the Comparative Examples is used to conduct theresist removal process, a concerned exists that metal wiring of thesemiconductor devices will be cut, causing a decrease in productionyield, while the remover composition of the present invention isexpected to decrease such risk.

[0114] More detailed examination of Table 5 reveals that the compositionof Comparative Examples 3, 5 and 7 which did not contain an organicphenol compound having two or more hydroxyl groups caused seriouscorrosion of the upper and side surfaces of the lower metal wiringpattern to seriously impair pattern width.

[0115] In addition, the composition of Comparative Example 1 having acomparatively high water content as an anti-corrosive also causedserious corrosion of the lower metal wiring pattern. TABLE 6 Metal ioneruption test (in ppb) Temperature of Remover Composition 50° C.Immersion Time 0 hours 12 hours 24 hours 48 hours Examples  1 1 3 19 35 2 1 3 17 36  3 1 2 13 29  4 2 3 19 37  5 1 4 21 41  6 1 3 16 32  7 2 315 34  8 1 5 14 31  9 1 1 15 30 10 1 3 13 30 11 1 2 12 29 ComparativeExamples  1 1 35 69 145  2 1 19 42 210  3 2 24 39 109  4 1 25 45 167  51 42 63 231  6 2 28 45 114  7 2 31 48 121

[0116] Referring to Table 6, it can seen that the resist removercompositions of the present invention (Examples 1 to 11) showed littlechange in the amount of aluminum ion eruption until 12 hours hadelapsed, indicating they caused little corrosion of the lower metalwiring pattern. On the other hand, the compositions of ComparativeExamples 1 to 7 showed increases in the amount of aluminum ion eruptionby about 10 times on average of those of the Examples after 12 hours hadelapsed, indicating they caused serious corrosion of the lower metalwiring pattern.

[0117] These results are due to the fact that the compositions ofExamples 1 to 11 have excellent anti-corrosiveness because they containd) organic phenol compounds having two or more hydroxyl groups whichfunctions as an anti-corrosive, while the compositions of ComparativeExamples 1 to 7 do not. Table 7 Resist redeposit test Sample b-14 Samplec-14 Treated Sheet Comparative Comparative Number Example 10 Example 3Example 10 Example 3 1 0 0 0 0 100 2 14 1 18 200 3 37 3 40 300 6 71 6 69400 9 138 10 140

[0118] Referring to Table 7, it can be seen that the composition ofComparative Example 3 had about 10 times the number of resist residuemicro-particles than those of the composition of Example 10, for 100 to400 treated sheets.

[0119] As the above shows, the resist remover composition according tothe present invention can easily and quickly remove resist films thathave been cured by dry etching, ashing and ion implantation processesand those modified by metallic side-products etched from lower metalfilm materials during said processes. It can also minimize the corrosionof lower metal wiring, particularly side pitting, and decrease thephenomenon in which resists that have been dissolved in resist removerare extracted to redeposit on the surface of a substrate even with aprolonged use. In addition, it can be rinsed with water without a needto use organic solvents such as isopropyl alcohol and dimethylsulfoxideduring a subsequent rinsing process.

What is claimed is:
 1. A resist remover composition comprising a) 10 to40 wt % of water-soluble organic amine compound, b) 10 to 60 wt % ofwater-soluble polar organic solvent, c) 10 to 30 wt % of water, and d)0.1 to 10 wt % of organic phenol compound containing two or morehydroxyl groups, characterized in that the water-soluble polar organicsolvent is 2-hydroxyisobutyric acid methylester (HBM).
 2. The resistremover composition according to claim 1, wherein the water-solubleorganic amine compound is amino alcohol.
 3. The resist removercomposition according to claim 2, wherein the amino alcohol is selectedfrom a group consisting of 2-amino-1-ethanol, 1-amino-2-propanol,2-amino-1-propanol, 3-amino-1-propanol, 2-amino-1-butanol,4-amino-1-butanol and a mixture thereof.
 4. The resist removercomposition according to claim 1, wherein the water-soluble polarorganic solvent is selected from a group consisting of dimethylsulfoxide(DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc),dimethylformamide (DMF), dimethylimidazolidinone (DMI), aliphaticcarboxylic acid ester and a mixture thereof.
 5. The resist removercomposition according to claim 4, wherein the aliphatic carboxylic acidester is selected from a group consisting of β-methoxy isobutyric acidmethyl ester (MBM), 2-hydroxypropionic acid isopentyl ester,2-hydroxypropionic acid butyl ester, ethyl-3-ethoxypropionate (EEP),methyl-3-methoxypropionate (MMP), ethyl-2-hydroxy propanate,butyl-2-hydroxy propanoate and a mixture thereof.